Effects of Zn doping on the In15Sb85 phase change recording thin films

Author

Ou, Sin-Liang ; Kuo, Po-Cheng ; Sheu, Shu-chi ; Lin, Ger-Pin ; Tsai, Tsung-lin ; Tang, Wei-Tai ; Chiang, Don-Yau

Author_Institution

Inst. of Mater. Sci. & Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2010

Firstpage

694

Lastpage

695

Abstract

The (In₁₅Sb₈₅)_100-xZn_x films (x = 0~17.4) were deposited on nature oxidized Si wafer and glass substrate at room temperature by magnetron co-sputtering of Sb target and InZn composite target. The optical and thermal properties of the films were examined by a homemade reflectivity thermal analyzer. Microstructures of the films were analyzed by transmission electron microscope (TEM). As x = 0~17.4, thermal analysis shows that the (In₁₅Sb₈₅)_100-xZn_x films have two phase transition temperature ranges, 189Â°C ~ 215Â°C and 300Â°C ~ 350Â°C.

Keywords

III-V semiconductors; crystal microstructure; glass; indium compounds; phase transformations; semiconductor doping; semiconductor thin films; sputtering; substrates; thermal analysis; transmission electron microscopes; zinc; In₁₅Sb₈₅:Zn; doping; glass substrate; homemade reflectivity thermal analyzer; magnetron co-sputtering; microstructures; nature oxidized Si wafer; optical properties; phase change recording thin films; phase transition temperature; temperature 189 degC to 215 degC; temperature 293 K to 298 K; temperature 300 degC to 350 degC; thermal properties; transmission electron microscope; Doping; Electron optics; Glass; Magnetic analysis; Microstructure; Optical films; Reflectivity; Semiconductor films; Temperature; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424614

Filename

5424614