Title :
A model for THz silicon nanotube transistor
Author :
Shan, Guangcun ; Zhang, Miao ; Huang, Wei
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
In this work, a schematic model of single-walled silicon nanotube (SWSiNT) devices is presented aimed at advancing the understanding of nano-electronic field. The circuit model of one-dimensional SWSiNT devices is firstly proposed. The cutoff frequency of SWSiNT devices is obtained, opening up the possibility of a THz silicon nanotube transistor.
Keywords :
elemental semiconductors; nanoelectronics; nanotube devices; semiconductor device models; silicon; terahertz wave devices; transistors; Si; circuit model; cutoff frequency; nanoelectronic field; one-dimensional devices; silicon nanotube transistor; single-walled silicon nanotube devices; Carbon nanotubes; Chemical technology; Mechanical factors; Microwave transistors; Nanoscale devices; Organic materials; Semiconductivity; Silicon; Stability; Temperature;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424615
