Title :
High-performance silicon phase modulator based on a double MOS capacitor configuration
Author :
Mao, An ; Gao, Dingshan ; Zhou, Zhiping
Abstract :
A silicon double metal-oxide-semiconductor (MOS) capacitor structure is proposed to form a high efficient, high speed, and compact electrooptic phase modulator. The simulation results show that the modulation efficiency, Vpi Lpi , reaches 0.16 (V.cm) and the modulation speed exceeds 15 GHz.
Keywords :
MOS capacitors; electro-optical modulation; elemental semiconductors; integrated optoelectronics; phase modulation; silicon; Si; electrooptic phase modulator; modulation efficiency; modulation speed; silicon double metal-oxide-semiconductor capacitor structure; High speed optical techniques; Hydrogen; MOS capacitors; Nonlinear optics; Optical modulation; Optical propagation; Optical refraction; Optical variables control; Phase modulation; Silicon;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347691
