• DocumentCode
    1659758
  • Title

    Effect of oxygen partial pressure on the electrical properties of the LSCO/AZO heterojunction

  • Author

    Lee, Shin ; Hu, Yi

  • Author_Institution
    Dept. of Mater. Eng., Tatung Univ., Taipei, Taiwan
  • fYear
    2010
  • Firstpage
    686
  • Lastpage
    687
  • Abstract
    P-type La0.5Sr0.5CoO3 (LSCO) and n-type 0.3 wt% Al-doped ZnO (AZO) thin films were obtained by radio-frequency magnetron sputter under different controlled Ar/O2 atmosphere. The structure of the heterojunction was p-LSCO (~125 and 250 nm)/n-AZO (~300 and 600 nm)/Si wafer and show good rectifying behavior.
  • Keywords
    II-VI semiconductors; aluminium; elemental semiconductors; lanthanum compounds; p-n heterojunctions; rectification; semiconductor thin films; semiconductor-insulator boundaries; silicon; sputter deposition; sputtered coatings; strontium compounds; wide band gap semiconductors; zinc compounds; LSCO-AZO heterojunction; La0.5Sr0.5CoO3-ZnO:Al-Si; electrical properties; oxygen partial pressure; p-n heterojunction; radiofrequency magnetron sputter; rectifying behavior; size 250 nm; size 600 nm; thin films; wafer; Annealing; Argon; Atmosphere; Conductivity; Diodes; Heterojunctions; Magnetic materials; Silicon; Sputtering; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424626
  • Filename
    5424626
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1659758