DocumentCode
1659807
Title
Influence of anisotropic diffusion of Ga and Al atoms during AlGaAs growth for periodically-inverted AlGaAs waveguides
Author
Matsushita, Tomonori ; Yoshida, Shigeki ; Ota, Junya ; Kondo, Takashi
Author_Institution
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
fYear
2012
Firstpage
1
Lastpage
2
Abstract
We have investigated a quasi-phase-matching AlGaAs waveguide using cathodoluminescence spectroscopy and atomic force microscopy. We found that the anisotropic diffusion of Al/Ga atoms causes Al-composition modulation as well as interface corrugations.
Keywords
III-V semiconductors; aluminium compounds; anisotropic media; atomic force microscopy; cathodoluminescence; diffusion; gallium arsenide; molecular beam epitaxial growth; optical materials; optical phase matching; optical waveguides; semiconductor growth; AlGaAs; aluminium-composition modulation; anisotropic diffusion; atomic force microscopy; cathodoluminescence spectroscopy; interface corrugations; periodically-inverted waveguides; quasiphase-matching; Atomic layer deposition; Gallium arsenide; Modulation; Nonlinear optics; Optical waveguides; Optical wavelength conversion; Propagation losses;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6325892
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