DocumentCode :
1659839
Title :
Development of ion sensitive field effect transistor for urinary microalbumin detection by silanization
Author :
Pinitwong, Wanvisa ; Pijitrojana, Wanchai
Author_Institution :
Dept. of Med. Eng., Thammasat Univ., Pathumthani, Thailand
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
For the first time, ISFET surface is modified using silanization on layer for Anti-HSA immobilization using 3-aminopropyltriethoxysilane (APTES) to obtain an amino layer on each surface. And incorporation with glutaraldehyde(GA) to obtain aldehyde layer of APTES-GA modified surfaces. The wetting properties, chemical bonding composition, are determined by contact angle(CA) measurement, the CA values decreased from non-functionalization, to silanization and cross link GA of 65.26 ± 0.11° to 85.54 ± 0.32 and 95.26 ± 0.67°. The binding ability to albumin shows the response range between 0-500 μg/ml and gave the gate potential change of 1 ± 0, 4 ± 0.58, 6 ± 0, 7 ± 1.12 and 10.33 ± 0.58 mV, respectively. This study provides an advantages of ion sensitive field effect transistor(ISFET) based biosensor for detect albumin in microgram range.
Keywords :
biochemistry; biomedical equipment; biomedical measurement; biosensors; bonds (chemical); contact angle; electrochemical sensors; ion sensitive field effect transistors; molecular biophysics; proteins; surface treatment; wetting; 3-aminopropyltriethoxysilane; APTES-GA modified surface; CA value reduction; ISFET based biosensor; ISFET surface modification; albumin binding ability; aldehyde layer; amino layer; anti-HSA immobilization; chemical bonding composition; contact angle measurement; cross link GA; gate potential change; glutaraldehyde incorporation; ion sensitive field effect transistor development; microgram range; nonfunctionalization; response range; silanization; urinary microalbumin detection; wetting properties; Biosensors; Chemicals; Immune system; Logic gates; Surface treatment; Temperature measurement; Voltage measurement; Immunosensor; Ion Sensitive Field Effect Transistor; Microalbumin; Silanization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2015 12th International Conference on
Conference_Location :
Hua Hin
Type :
conf
DOI :
10.1109/ECTICon.2015.7206967
Filename :
7206967
Link To Document :
بازگشت