Title :
Highly-strained Germanium as a gain medium for silicon-compatible lasers
Author :
Sukhdeo, D. ; Donguk Nam ; Szu-Lin Cheng ; Ze Yuan ; Roy, Anirban ; Huang, Kevin Chih-Yao ; Brongersma, Mark ; Nishi, Yoshio ; Saraswat, Krishna
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
Germanium-on-silicon lasers have recently been demonstrated. Our theoretical modeling shows that increasing germanium´s strain to 1.1%, which we show is achievable, can reduce the threshold for net gain by over a factor of 20.
Keywords :
Ge-Si alloys; Raman spectra; elemental semiconductors; germanium; optical materials; photoluminescence; piezo-optical effects; semiconductor lasers; Ge; Ge-Si; Raman spectra; direct band gap photoluminescence; gain medium; germanium-on-silicon lasers; silicon-compatible lasers; strain; Doping; Germanium; Laser theory; Photonic band gap; Silicon; Tensile strain;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
