Title :
Large area GaN/AlN nanowire resonant tunneling devices on silicon
Author :
Fathololoumi, S. ; Zhao, S. ; Nguyen, H.P.T. ; Djavid, M. ; Shih, I. ; Mi, Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
We have demonstrated, for the first time, resonant tunneling in large area nanowire devices on Si substrates, wherein GaN/AlN multiple quantum wells are incorporated in nearly-defect free GaN nanowires on a Si-platform.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; nanowires; resonant tunnelling devices; semiconductor quantum wells; wide band gap semiconductors; GaN-AlN; Si; nanowire resonant tunneling devices; nearly-defect free nanowires; quantum wells; Gallium nitride; Nanoscale devices; Quantum cascade lasers; Resonant tunneling devices; Silicon; Substrates; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
