DocumentCode
1660221
Title
Analytical current model for dual-gate MOSFET
Author
Karahahliloglu, K. ; Dündar, Günhan
Author_Institution
Dept. of Electr. & Electron. Eng., Bogazici Univ., Istanbul, Turkey
Volume
2
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
1015
Abstract
An analytical current model for dual-gate MOSFET structures is presented. The standard method for MOSFET modeling is investigated for dual and multi-gate MOSFETs. For the difficulties arising in such methods, an energy-based approximation is introduced to obtain a quasi-Fermi potential solution that will be valid along the channel. An explicit current expression for the dual gate MOSFET is obtained by making use of this solution. The analytical results are compared with the results of the PISCES 2D device simulator program, for various biasing conditions
Keywords
MOSFET; electric current; semiconductor device models; MOSFET modeling; analytical current model; biasing conditions; dual-gate MOSFET structures; energy-based approximation; quasi-Fermi potential solution; Analytical models; Differential equations; Linear approximation; MOSFET circuits; Nonlinear equations; Partial differential equations; Poisson equations; Power engineering and energy; Taylor series;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on
Print_ISBN
0-7803-7057-0
Type
conf
DOI
10.1109/ICECS.2001.957649
Filename
957649
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