• DocumentCode
    1660222
  • Title

    Advances in Si-Ge-Sn materials science and technology

  • Author

    Kouvetakis, John ; Tolle, John ; Menendez, J. ; D´Costa, Vijay Richard

  • Author_Institution
    Chem. & Phys., Arizona State Univ., Tempe, AZ
  • fYear
    2007
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    SiGeSn-based optical materials are synthesized on silicon and designed to undergo indirect-to-direct bandgap transitions via strain engineering and composition tuning across the IR range. These provide enabling buffer-layer technologies for integration of semiconductors with Si.
  • Keywords
    Ge-Si alloys; buffer layers; integrated optoelectronics; optical materials; optical tuning; strontium alloys; IR range; Si-Ge-Sn; buffer-layer technologies; composition tuning; indirect-to-direct bandgap transitions; optical materials; semiconductor integration; strain engineering; Atomic layer deposition; Detectors; Displays; Lattices; Materials science and technology; Optical design; Optical materials; Photonic band gap; Silicon alloys; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2007 4th IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-0934-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2007.4347715
  • Filename
    4347715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1660222