DocumentCode
1660283
Title
Design, fabrication and performance of SO2 sensor based on LaF3 solid-electrolyte
Author
Sun, Goliang ; Wang, Hairong ; Jiang, Zhuangde ; Yin, Tianshuo
Author_Institution
State Key Lab. for Manuf. Syst. Eng., Xi´´an Jiaotong Univ., Xi´´an, China
fYear
2010
Firstpage
674
Lastpage
675
Abstract
LaF3 is attractive because of its possible application at room temperature, in addition to other advantages and it has been investigated for measuring various types of gases. A solid-state gas sensor with the structure of (working electrode) SO2,Pt/LaF3/Sn,SnF2 (reference electrode) was developed for detecting sulfur dioxide at room temperature. With numerical simulation, a series of working electrodes with different line widths were designed. Typical lift-off process was applied to produce the micro pattern of Pt working electrode layer on one side of the solid electrolyte (LaF3) wafer. The sensor cell was electrolysed in order to form SnF2 layer with about 3nm thickness at the interface between the Sn film and the LaF3 wafer. The EMF of the sensor was found to vary logarithmically with a change in sulfur dioxide partial pressure, following Nernst´s equation. Experiments show the working electrode with different line width somewhat influences on performance of the gas sensor. The sensing mechanism of the sulfur dioxide sensor was also investigated.
Keywords
gas sensors; lanthanum compounds; microfabrication; numerical analysis; platinum; polishing; solid electrolytes; sputter deposition; sulphur compounds; tin; tin compounds; Nernst equation; Pt-LaF3-SnF2-Sn; SO2; lift-off process; numerical simulation; room temperature sulfur dioxide detection; sensor cell; sensor design; sensor fabrication; solid electrolyte wafer; solid-electrolyte; solid-state gas sensor; sulfur dioxide partial pressure; temperature 293 K to 298 K; working electrode layer; Electrodes; Equations; Fabrication; Gas detectors; Gases; Numerical simulation; Solid state circuits; Temperature sensors; Thick film sensors; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424644
Filename
5424644
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