• DocumentCode
    1660308
  • Title

    Optically activated Si nanowires and nanoribbons as a platform for Si-based photonics

  • Author

    Kim, M.-H. ; Park, T.-E. ; Kim, U.-K. ; Choi, H.J. ; Sung, G.Y. ; Shin, J.-H. ; Suh, K.

  • Author_Institution
    Sch. of Adv. Mater. Sci. & Eng., Yonsei Univ., Yonsei
  • fYear
    2007
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper reports on optical activation of Si nanowires and Si nanoribbons by coupling Er. Single crystalline Si nanowires with diameters 100 nm and with length exceeding mum, and Si nanoribbons with thickness of 5-10 nm and with length of a few hundred of mum were grown by vapor-liquid-solid (VLS) growth mechanism using metal catalysts. Such Er-activated Si nanowires display strong Er3+ luminescence, excited via carriers in Si nanowires, yet comparable to pure silica in luminescence efficiency, showing promise of becoming a new material platform for Si-based photonics.
  • Keywords
    elemental semiconductors; erbium; nanowires; optical materials; photoluminescence; silicon; Er-activation; Si; Si nanoribbons; Si nanowires; luminescence; optical activation; vapor-liquid-solid growth; Argon; Coatings; Erbium; Isolation technology; Luminescence; Materials science and technology; Nanowires; Optical films; Photonics; Scanning electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2007 4th IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-0934-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2007.4347719
  • Filename
    4347719