DocumentCode :
1660470
Title :
Microstructure and electrical properties of in-situ annealed carbon films
Author :
Shakerzadeh, Maziar ; Tay, Beng Kang ; Teo, Hang Tong Edwin ; Tan, Chong Wei
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear :
2010
Firstpage :
230
Lastpage :
231
Abstract :
The microstructure and electrical properties of in-situ annealed carbon films is studied in this paper. The structure of the films is studied by transmission electron microscopy, electron energy loss spectroscopy and Raman spectroscopy. The microstructure of the films strongly depends on the deposition temperature for the films deposited at high temperatures (higher than 400°C). However, at low temperatures the substrate bias is the other crucial factor which governs the microstructure of the film. Electrical conductivity of the film strongly depends on the formation of preferred orientation in the microstructure of the films.
Keywords :
Raman spectroscopy; annealing; carbon; electron energy loss spectra; semiconductor thin films; transmission electron microscopy; Raman spectroscopy; deposition temperature; electrical conductivity; electrical properties; electron energy loss spectroscopy; film microstructure; in-situ annealed carbon films; substrate bias; transmission electron microscopy; Annealing; Conductive films; Conductivity; Energy loss; Microstructure; Raman scattering; Spectroscopy; Substrates; Temperature dependence; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424651
Filename :
5424651
Link To Document :
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