Characterization of Al2O3 films grown by electron beam evaporator on Si substrates

We report the characterization of aluminum oxide (Al₂O₃) films which are grown on Si substrates by electron beam evaporator. This paper focuses on the characteristic variation of Al2O3 films depending on the different annealing techniques, such as post-deposition annealing and post-metallization annealing. The capacitance-voltage (C-V) curves indicate a negative charge and interface trap charge density between the Al₂O₃ film and Si interface. The current-voltage (I-V) curves show a leakage current. The x-ray diffraction (XRD) patterns show the crystallinity of Al₂O₃ films. Based on the results, the annealing effect is important condition to increase negative fixed charge in the Al₂O₃ films.