DocumentCode :
1660607
Title :
Luminescence characterization and room-temperature 1.6 μm electroluminescence in si/β-fesi2/si double heterostructures on si(001) by molecular beam epitaxy
Author :
Murase, S. ; Ugajin, Y. ; Suzuno, M. ; Suemasu, T.
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ., Tsukuba
fYear :
2007
Firstpage :
1
Lastpage :
3
Abstract :
We have fabricated Si/β-FeSi2/Si double heterostructures light-emitting diodes on Si(001) by molecular beam epitaxy and 1.6 μm electroluminescence was realized at room temperature. The origin of luminescence was investigated using time-resolved photoluminescence measurements.
Keywords :
electroluminescence; elemental semiconductors; iron compounds; light emitting diodes; molecular beam epitaxial growth; photoluminescence; semiconductor heterojunctions; silicon; Si; Si-FeSi2-Si; double heterostructures; electroluminescence; light-emitting diodes; molecular beam epitaxy; temperature 293 K to 298 K; time-resolved photoluminescence; wavelength 1.6 μm; Annealing; DH-HEMTs; Electroluminescence; Iron; Light emitting diodes; Luminescence; Molecular beam epitaxial growth; Optical waveguides; Photonic integrated circuits; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
Type :
conf
DOI :
10.1109/GROUP4.2007.4347732
Filename :
4347732
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1660607
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