DocumentCode
1660681
Title
Light-Emitting Transistor Based on Ultra-Thin Silicon
Author
Saito, S. ; Hisamoto, D. ; Shimizu, H. ; Hamamura, H. ; Tsuchiya, R. ; Matsui, Y. ; Mine, T. ; Arai, T. ; Sugii, N. ; Torii, K. ; Kimura, S. ; Onai, T.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo
fYear
2007
Firstpage
1
Lastpage
3
Abstract
We confirmed enhanced electroluminescence by lateral carrier injections to quantum confined ultra-thin silicon. The optical intensity can be controlled by the back gate voltage, and the device operates as a light-emitting transistor.
Keywords
electroluminescent devices; elemental semiconductors; light emitting devices; phototransistors; silicon; Si; back gate voltage; electroluminescence; lateral carrier injection; light-emitting transistor; optical intensity control; quantum confined ultra-thin silicon; Electrodes; Electron optics; Lighting control; Optical control; Optical device fabrication; Optical devices; Optical interconnections; Potential well; Silicon on insulator technology; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-0934-1
Type
conf
DOI
10.1109/GROUP4.2007.4347735
Filename
4347735
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