DocumentCode
1660749
Title
Simple methods to calculate IGBT and diode conduction and switching losses
Author
Feix, Gudrun ; Dieckerhoff, Sibylle ; Allmeling, Jost ; Schönberger, John
Author_Institution
Tech. Univ. Berlin, Berlin, Germany
fYear
2009
Firstpage
1
Lastpage
8
Abstract
This paper presents fast and simple methods to calculate IGBT and diode switching and conduction losses in power electronic system simulation. With the models derived in this paper, these losses can be calculated although the device data is incomplete. A novel approach to calculate diode reverse recovery losses is included. Furthermore, the correlation between stray inductance and switching energy is investigated.
Keywords
losses; power semiconductor diodes; power semiconductor switches; IGBT; diode conduction losses; diode reverse recovery losses; diode switching losses; power electronic system simulation; stray inductance; switching energy; Inductance; Insulated gate bipolar transistors; Manufacturing; Power electronics; Power semiconductor switches; Semiconductor diodes; Switching loss; Temperature dependence; Temperature distribution; Threshold voltage; IGBT; Modelling; Power semiconductor device; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location
Barcelona
Print_ISBN
978-1-4244-4432-8
Electronic_ISBN
978-90-75815-13-9
Type
conf
Filename
5278746
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