Title :
Characterization of RuO2 nanocrystals deposited on carbon nanotubes by reactive RF sputtering
Author :
Su, Yu-Chen ; Chen, Ching-An ; Chen, Yi-Min ; Huang, Ying-Sheng ; Lee, Kuei-Yi
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Abstract :
RuO2 nanocrystals (NCs) were deposited on carbon nanotubes (CNTs) by reactive RF magnetron sputtering using a Ru target under different conditions. Their surface morphology, structural, spectroscopic and field emission (FE) properties were studied using field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM), Raman spectroscopy, and a home made high vacuum FE measurement system. FESEM micrographs showed that the surface morphology of the as-deposited RuO2 varied from nanoparticles-like to tube-like NCs as the oxygen flux increased from 2 to 10 sccm. The TEM image of RuO2-coated CNTs revealed that uniform distribution and random direction of RuO2 NCs had been deposited on the surface of the CNTs. The red-shifts of the peak positions and broadening of linewidths of the Raman features were attributed to both the size and residual stress effects. The FE characteristics revealed a low operating electric field and stable emission current in the RuO2-coated CNTs.
Keywords :
Raman spectra; carbon nanotubes; field emission; field emission electron microscopy; internal stresses; nanoparticles; red shift; ruthenium compounds; scanning electron microscopy; sputter deposition; surface morphology; transmission electron microscopy; C; RF magnetron sputtering; Raman spectroscopy; RuO2; carbon nanotubes; field emission scanning electron microscopy; linewidth broadening; nanocrystals; reactive RF sputtering; red shift; residual stress effects; size effect; surface morphology; transmission electron microscopy; Carbon nanotubes; Electron emission; Iron; Nanocrystals; Radio frequency; Raman scattering; Scanning electron microscopy; Spectroscopy; Surface morphology; Transmission electron microscopy;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424662