DocumentCode :
1660874
Title :
Ge-based Active Devices for Si Photonics
Author :
Liu, Jifeng ; Ahn, Donghwan ; Jongthammanurak, Samerkhae ; Pan, Dong ; Hong, Ching-Yin ; Beals, Mark ; Kimerling, Lionel C. ; Michel, Jurgen
Author_Institution :
Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA
fYear :
2007
Firstpage :
1
Lastpage :
3
Abstract :
We present waveguide-coupled, Ge-based photodetectors and electro-absorption (EA) modulators for active Si integrated photonics. These devices offer high optoelectronic performance and compatibility with Si CMOS process.
Keywords :
CMOS integrated circuits; electro-optical modulation; electroabsorption; germanium; integrated optics; integrated optoelectronics; optical waveguides; photodetectors; CMOS process; Ge; active integrated photonics; electro-absorption modulators; optoelectronic performance; photodetectors; waveguide-coupled devices; Bandwidth; CMOS process; CMOS technology; Detectors; Germanium silicon alloys; Materials science and technology; Optical coupling; Optical waveguides; Photodetectors; Photonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
Type :
conf
DOI :
10.1109/GROUP4.2007.4347741
Filename :
4347741
Link To Document :
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