Title :
Ge/Si avalanche photodiodes for 1.3μm optical fiber links
Author :
Kang, Yimin ; Litski, Stas ; Sarid, Gadi ; Morse, Mike ; Paniccia, Mario J. ; Pauchard, Alexandre ; Gan, Kian Giap ; Bowers, John E.
Author_Institution :
Intel Corp., Santa Clara, CA
Abstract :
We demonstrate the epitaxially-grown Ge/Si avalanche photodiodes with a responsivity at 1310 nm of 0.52 A/W, a breakdown thermal coefficient of 0.07%/°C, a 3 dB-bandwidth of 7 GHz and a dark current density of 2.75 mA/cm2 at unity gain.
Keywords :
avalanche photodiodes; dark conductivity; elemental semiconductors; germanium; optical communication equipment; optical fibre communication; optical links; silicon; Ge-Si; breakdown thermal coefficient; dark current density; epitaxially-grown avalanche photodiodes; frequency 7 GHz; optical fiber links; wavelength 1310 nm; Absorption; Avalanche breakdown; Avalanche photodiodes; Bandwidth; Dark current; Optical fibers; Parasitic capacitance; Semiconductor materials; Temperature; Wavelength measurement;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347746
