Title :
Numerical modeling of the CIGS thin film solar cell with varied defect density and Ga content
Author :
Zhou, Minchao ; Ye, Hao ; Fu, Yong ; Xiong, Dayuan ; Guo, Fangmin
Author_Institution :
Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
Abstract :
This work studies the different impacts of two main kind defects which determine the performance of Copper Indium Gallium Diselenide (CIGS) solar cells theoretically. The trend of capability with varied defect density and Ga content was investigated in detail. The deep defect results have been achieved, which are in accordance with the experimental data.
Keywords :
copper compounds; deep levels; defect states; gallium compounds; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; CIGS thin film solar cell; CuInxGa1-xSe2; copper indium gallium diselenide; defect density; Copper; Current density; Electric resistance; Gallium compounds; Indium; Numerical models; Optical films; Photonic band gap; Photovoltaic cells; Transistors;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424684
