DocumentCode
1661310
Title
Construction and operation of sub-10 nm vertical molecular transistors
Author
Mentovich, Elad ; Richter, Shachar
Author_Institution
Tel Aviv Univ., Tel Aviv, Israel
fYear
2010
Firstpage
646
Lastpage
647
Abstract
We present a novel type of nano device: the sub-10 nm vertical molecular transistor. This device can be fabricated using conventional lithographic methods and in mass production. We use this transistor to explore the transport mechanism of various molecular systems such molecular quantum dots and doped proteins.
Keywords
biomolecular electronics; biotransport; fullerene compounds; fullerene devices; molecular biophysics; nanoelectronics; nanofabrication; nanolithography; proteins; quantum dots; transistors; C60 doped BSA; carboxyl fullerene; doped protein; ferrocene derivative; lithographic method; molecular quantum dots; molecular systems; nanodevice; transport mechanism; vertical molecular transistor; Dielectric substrates; Electrodes; Electronic components; Gold; Low voltage; Mass production; Proteins; Quantum dots; Silicon; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424686
Filename
5424686
Link To Document