Title :
Anti-bunching from plasmon induced non-blinking single CdSe/ZnS quantum dot
Author :
Wu, Xiao-Weo ; Gong, Ming ; Dong, Chun-Hua ; Cui, Jin-Ming ; Yang, Yong ; Han, Zheng-Fu ; Guo, Guang-Can
Author_Institution :
Key Lab. of Quantum Inf., Univ. of Sci. & Technol. of China, Hefei, China
Abstract :
CdSe/ZnS colloidal quantum dot generally exists blinking phenomenon during luminescence process, that remarkably influences its application as a single photon source. In this work, we used the effect of surface plasmon to effectively suppressed the blinking by locating quantum dot on gold film. The anti-bunching character was also observed with g(2)(0) as low as 0.34 at room temperature. Surface plasmon was shown to enhance the photoluminescence and reduce the lifetime of exciton, which was controlled by excitation power. Our result suggests a potential way to utilize CdSe/ZnS as a high efficient single photon emitter in optics.
Keywords :
II-VI semiconductors; cadmium compounds; colloids; excitons; gold; photoluminescence; semiconductor quantum dots; surface plasmons; wide band gap semiconductors; zinc compounds; Au; CdSe-ZnS; anti-bunching; colloidal quantum dot; exciton lifetime; gold film; nonblinking single quantum dot; photoluminescence; semiconductor quantum dots; single photon emitter; single photon source; surface plasmon; temperature 293 K to 298 K; Excitons; Gold; Luminescence; Optical films; Photoluminescence; Plasmons; Quantum dots; Stimulated emission; Temperature; Zinc compounds;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424700