Room temperature continuous wave lasing in nanopillar photonic crystal cavities

Author

Scofield, A.C. ; Kim, S.-H. ; Shapiro, J.N. ; Lin, A. ; Liang, B.L. ; Scherer, A. ; Huffaker, D.L.

Author_Institution

Dept. of Electr. Eng., Univ. of California Los Angeles, Los Angeles, CA, USA

fYear

2012

Firstpage

1

Lastpage

2

Abstract

We demonstrate room temperature continuous wave lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars. Single-cell high-Q photonic crystal cavities are formed with nanopillars by selective-area epitaxy. Control of the nanopillar geometry and heterostructures allows for high-Q and large confinement factor, resulting in a low threshold power density of 75 W/cm² at 1040 nm emission wavelength.

Keywords

III-V semiconductors; Q-factor; laser cavity resonators; nanophotonics; photonic crystals; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor lasers; bottom-up photonic crystal cavities; confinement factor; emission wavelength; heterostructures; nanopillar geometry; patterned III-V nanopillars; room temperature continuous wave lasing; selective-area epitaxy; single-cell high-Q nanopillar photonic crystal cavities; temperature 293 K to 298 K; threshold power density; wavelength 1040 nm; Cavity resonators; Gallium arsenide; Indium gallium arsenide; Lasers; Lattices; Photonic crystals; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2012 Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-4673-1839-6

Type

conf

Filename

6325958