Preparation of SnO2 nanowires by solvent-free method using mesoporous silica template and its gas sensitive properties

Author

Zhang, Haijiao ; Tan, Zhijin ; Wu, Ruofei ; Zhang, Chunlei ; Shi, Wenming ; Jiao, Zheng

Author_Institution

Inst. of Nanochemistry & Nanobiology, Shanghai Univ., Shanghai, China

fYear

2010

Firstpage

631

Lastpage

632

Abstract

In this paper we present a simple and facile method to synthesize tin dioxide (SnO₂) nanowires by solvent-free infiltration method using SnCl₂Â·2H₂O as precursor and mesoporous silica SBA-15 as hard template. No solvent were used during the processing. The products were characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM) and N₂ adsorption/desorption isotherms. The results indicated that SnO₂ nanowires fabricated by this method have a diameter of about 8 nm and a relatively high surface area 73 m₂/g. The gas sensitive properties of SnO₂ nanowires were measured. Compared with bulk SnO₂, SnO₂ nanowires showed much higher response to toluene.

Keywords

X-ray diffraction; adsorption; desorption; gas sensors; nanofabrication; nanowires; nitrogen; semiconductor growth; semiconductor materials; semiconductor quantum wires; tin compounds; transmission electron microscopy; N₂; SnO₂; X-ray powder diffraction; adsorption; desorption; gas sensitive properties; mesoporous silica template; nanowires; solvent-free infiltration; transmission electron microscopy; Gas detectors; Mesoporous materials; Nanowires; Plastic products; Powders; Silicon compounds; Surface morphology; Tin; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424710

Filename

5424710