Nonlinear effects of RF interference in MOS operational amplifiers

Author

Fiori, Franco ; Crovetti, Paolo S.

Author_Institution

Dipt. di Elettronica, Politecnico di Torino, Italy

Volume

1

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

201

Abstract

The effect of radio frequency interference in MOS operational amplifiers is dealt with. In order to obtain analytical expressions which can be useful for design purposes, a second-order nonlinear circuit analysis has been performed. This approach grants a good insight in the nonlinear mechanisms involved in the RFI induced DC offset shift in operational amplifiers and allows us to relate this behavior to design parameters and parasitics. The validity of the proposed model is discussed, comparing theoretical predictions with computer simulations and experimental measurements

Keywords

MOS analogue integrated circuits; differential amplifiers; feedback amplifiers; nonlinear network analysis; operational amplifiers; radiofrequency interference; MOS differential pair; MOS op amps; MOS operational amplifiers; RFI induced DC offset shift; design parameters; parasitics; radiofrequency interference; second-order nonlinear circuit analysis; Circuits; Computer simulation; Digital signal processing; Electromagnetic interference; Operational amplifiers; Performance analysis; Radio frequency; Radiofrequency amplifiers; Radiofrequency interference; Signal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on

Print_ISBN

0-7803-7057-0

Type

conf

DOI

10.1109/ICECS.2001.957715

Filename

957715