Complete formation sequence of InAs quantum dots on lattice-mismatched InGaAs/GaAs substrates

Author

Kanjanachuchai, Songphol ; Limwongse, Teerawat

Author_Institution

Dept. of Electr. Eng., Chulalongkorn Univ., Bangkok, Thailand

fYear

2010

Firstpage

626

Lastpage

627

Abstract

The complete formation sequence of InAs quantum dots (QDs) on lattice-mismatched InGaAs cross-hatch substrate has been identified. The InAs QDs sequentially form at the following locations: the dislocation free end, the dislocation T-section, the dislocation intersection, the [1-10] dislocation line, the [110] dislocation line and the flat area. Different surface energies at these locations give rise to QD formation at different effective thicknesses and times.

Keywords

III-V semiconductors; dislocations; gallium arsenide; indium compounds; semiconductor quantum dots; substrates; InAs; InGaAs-GaAs; cross-hatch substrate; dislocation T-section; dislocation free end; dislocation intersection; dislocation line; formation sequence; lattice-mismatched substrates; semiconductor quantum dots; surface energies; Atomic force microscopy; Chemical lasers; Gallium arsenide; Indium gallium arsenide; Laser modes; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Substrates; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424719

Filename

5424719