Title :
Complete formation sequence of InAs quantum dots on lattice-mismatched InGaAs/GaAs substrates
Author :
Kanjanachuchai, Songphol ; Limwongse, Teerawat
Author_Institution :
Dept. of Electr. Eng., Chulalongkorn Univ., Bangkok, Thailand
Abstract :
The complete formation sequence of InAs quantum dots (QDs) on lattice-mismatched InGaAs cross-hatch substrate has been identified. The InAs QDs sequentially form at the following locations: the dislocation free end, the dislocation T-section, the dislocation intersection, the [1-10] dislocation line, the [110] dislocation line and the flat area. Different surface energies at these locations give rise to QD formation at different effective thicknesses and times.
Keywords :
III-V semiconductors; dislocations; gallium arsenide; indium compounds; semiconductor quantum dots; substrates; InAs; InGaAs-GaAs; cross-hatch substrate; dislocation T-section; dislocation free end; dislocation intersection; dislocation line; formation sequence; lattice-mismatched substrates; semiconductor quantum dots; surface energies; Atomic force microscopy; Chemical lasers; Gallium arsenide; Indium gallium arsenide; Laser modes; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Substrates; Surface morphology;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424719
