• DocumentCode
    1662188
  • Title

    III-nitride nanowire array solar cells

  • Author

    Wierer, Jonathan J., Jr. ; Wang, George T. ; Li, Qiming ; Koleske, Daniel D. ; Lee, Stephen R.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    III-nitride solar cells comprised of large-area arrays of GaN-InGaN core-shell nanowires electrically connected by a p-InGaN canopy are demonstrated. This proof-of-concept hybrid film-nanowire device enables various advantages including elastic strain relief within the InGaN shell.
  • Keywords
    III-V semiconductors; elasticity; gallium compounds; indium compounds; nanowires; solar cell arrays; wide band gap semiconductors; GaN-InGaN; III-nitride nanowire array solar cells; core-shell nanowires; elastic strain; proof-of-concept hybrid film-nanowire device; Arrays; Fabrication; Gallium nitride; Indium; Photovoltaic cells; Quantum well devices; Strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6325973
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1662188