• DocumentCode
    1662345
  • Title

    N-type conductivity in oxygen ion implanted nanocrystalline diamond films

  • Author

    Hu, X.J. ; Liu, H.J. ; Pan, J.P. ; Lu, L.P.

  • Author_Institution
    Coll. of Chem. Eng. & Mater. Sci., Zhejiang Univ. of Technol., Hangzhou, China
  • fYear
    2010
  • Firstpage
    620
  • Lastpage
    621
  • Abstract
    Nanocrystalline diamond films were implanted by oxygen ion and annealed under different temperatures. The results show that the oxygen ion implanted nanocrystalline diamond films exhibit n-type conductivity when the annealing temperature is above 800°C. The annealing stimulates the electrical activation of oxygen ion implanted diamond grains and grain boundaries. The origin of n-type conductivity and related mechanisms are discussed.
  • Keywords
    annealing; diamond; grain boundaries; ion implantation; nanostructured materials; C:O; annealing temperature; electrical activation; grain boundaries; n-type conductivity; nanocrystalline diamond films; oxygen ion implantion; Amorphous materials; Annealing; Chemical vapor deposition; Conductive films; Conductivity; Diamond-like carbon; Grain boundaries; Hall effect; Nitrogen; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424728
  • Filename
    5424728
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1662345