DocumentCode
1662400
Title
Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs
Author
Lu, L. ; Chen, Z. ; Bryant, A. ; Santi, E. ; Hudgins, J.L. ; Palmer, P.R.
Author_Institution
Univ. of South Carolina, Columbia
fYear
2007
Firstpage
342
Lastpage
349
Abstract
A compact trench-gate IGBT model that captures MOS-side carrier injection is developed. The model retains the simplicity of a one-dimensional solution to the ambipolar diffusion equation, but at the same time captures MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms.
Keywords
MIS devices; insulated gate bipolar transistors; semiconductor device models; MOS-side carrier injection; ambipolar diffusion equation; steady-state carrier distribution; switching waveforms; trench-gate IGBT model; Boundary conditions; Charge carrier density; Charge carrier processes; Circuit simulation; Conductivity; Equations; Geometry; Insulated gate bipolar transistors; Solid modeling; Switching loss;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE
Conference_Location
New Orleans, LA
ISSN
0197-2618
Print_ISBN
978-1-4244-1259-4
Electronic_ISBN
0197-2618
Type
conf
DOI
10.1109/07IAS.2007.44
Filename
4347808
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