Title :
Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs
Author :
Lu, L. ; Chen, Z. ; Bryant, A. ; Santi, E. ; Hudgins, J.L. ; Palmer, P.R.
Author_Institution :
Univ. of South Carolina, Columbia
Abstract :
A compact trench-gate IGBT model that captures MOS-side carrier injection is developed. The model retains the simplicity of a one-dimensional solution to the ambipolar diffusion equation, but at the same time captures MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms.
Keywords :
MIS devices; insulated gate bipolar transistors; semiconductor device models; MOS-side carrier injection; ambipolar diffusion equation; steady-state carrier distribution; switching waveforms; trench-gate IGBT model; Boundary conditions; Charge carrier density; Charge carrier processes; Circuit simulation; Conductivity; Equations; Geometry; Insulated gate bipolar transistors; Solid modeling; Switching loss;
Conference_Titel :
Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-1259-4
Electronic_ISBN :
0197-2618
DOI :
10.1109/07IAS.2007.44
