• DocumentCode
    1662402
  • Title

    Suppression of random-dopant-induced characteristic fluctuation in 16 nm MOSFET devices using dual-material gate

  • Author

    Yiu, Chun-Yen ; Ciou, Yong-Yue ; Chang, Ru-Wei ; Lee, Kuo-Fu ; Cheng, Hui-Wen ; Li, Yiming

  • Author_Institution
    Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2010
  • Firstpage
    28
  • Lastpage
    31
  • Abstract
    In this work, we for the first time explore the dual material gate (DMG) and inverse DMG devices for suppressing random dopant fluctuation (RDF)-induced characteristics fluctuation in 16-nm MOSFET devices. The physical mechanism of DMG devices to suppress RDF are investigated and discussed. The improvement of DMG for suppressing the RDF-induced Vth, Ion, and Ioff fluctuation are 28%, 12.3%, and 59%, respectively.
  • Keywords
    MOSFET; nanoelectronics; MOSFET devices; dual material gate; dual-material gate; inverse DMG devices; random dopant fluctuation-induced characteristic fluctuation; random-dopant-induced characteristic fluctuation suppression; size 16 nm; Performance evaluation; Tin; Variable speed drives; Dual material gate; Potential barriers; Random dopant fluctuatio; Work function;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2010 International Symposium on
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-4244-6693-1
  • Type

    conf

  • DOI
    10.1109/ISNE.2010.5669139
  • Filename
    5669139
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1662402