Title :
Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages
Author :
Bergogne, Dominique ; Hammoud, Asif ; Tournier, Dominique ; Buttay, Cyril ; Amieh, Youness ; Bevilacqua, Pascal ; Zaoui, Abderahime ; Morel, Hervé ; Allard, Bruno
Author_Institution :
Lab. Ampere, INSA de Lyon, Villeurbanne, France
Abstract :
JFET are experimentally stressed to provide data for modelling, inverter and driver design. The experimental set-up is described. A surge generator is built and a SiC JFET is stressed. During the stress, a temperature estimation is done at increasing time steps, in order to obtain the full thermal response versus time.
Keywords :
invertors; junction gate field effect transistors; silicon compounds; JFET; SiC; driver design; electrothermal behaviour; inverter design; lightning-induced overvoltages; temperature estimation; Driver circuits; Electromagnetic compatibility; Inverters; JFET circuits; Lightning; Silicon carbide; Surge protection; Temperature; Thermal stresses; Voltage; JFET; Silicon Carbide; Voltage Source Converter;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
