Title :
Applications of the Thermal Step Method to the Characterization of Electric Charge in MOS Components
Author :
Fruchier, O. ; Notingher, P., Jr. ; Agnel, S. ; Toureille, A. ; Forest, F. ; Cunningham, S. ; Rousset, B. ; Sanchez, J.L.
Author_Institution :
Univ. of Montpellier 2, Montpellier
Abstract :
This work is concerned with the development of a non destructive method for measuring electric charge in metal-oxide-semiconductor (MOS) components and devices. The aim is to obtain further information on microelectronics and power electronics components and, using the gate oxide state, to assess semiconductors health. Results obtained on MOS samples with oxide thicknesses of 2 nm, 50 nm and 120 nm, and on power electronics modules are presented.
Keywords :
MOSFET; charge measurement; semiconductor device measurement; MOS components; electric charge characterization; nondestructive method; power electronics modules; semiconductors health assessment; size 120 nm; size 2 nm; size 50 nm; thermal step method; Aging; Circuits; Copper; Insulated gate bipolar transistors; Insulation; Microelectronics; Power electronics; Power system reliability; Power system security; Stress;
Conference_Titel :
Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-1259-4
Electronic_ISBN :
0197-2618
DOI :
10.1109/07IAS.2007.72
