Title :
Facile fabrication of Si nanowires arrays for solar cell applications
Author :
Li, Xiaocheng ; Tay, Beng Kang
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Large-area of Si nanowires (SiNWs) has been fabricated on Si surface by a facile silver-catalyzed chemical etching process. The solar cell incorporated with SiNWs arrays shows a high power conversion efficiency of 6.69% with an open circuit voltage of 558 mV and short circuit current density of 25.13 mA/cm2 without using any extra antireflection layer and surface passivation technique. The high conversion efficiency of the solar cell is attributed to the low reflective index of SiNWs for the incident sunlight. Optimization of electrical contact and phosphorus diffusion process will be critical to improve the performance of SiNWs based solar cell in the future.
Keywords :
diffusion; elemental semiconductors; etching; nanowires; optimisation; passivation; silicon; solar cells; Si; Si nanowires arrays; antireflection layer; electrical contact; facile fabrication; facile silver-catalyzed chemical etching; open circuit voltage; optimization; phosphorus diffusion; reflective index; short circuit current density; solar cell; surface passivation; voltage 558 mV; Chemical processes; Contacts; Etching; Fabrication; Nanowires; Passivation; Photovoltaic cells; Power conversion; Short circuit currents; Voltage;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424740
