Facile fabrication of Si nanowires arrays for solar cell applications

Author

Li, Xiaocheng ; Tay, Beng Kang

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2010

Firstpage

612

Lastpage

613

Abstract

Large-area of Si nanowires (SiNWs) has been fabricated on Si surface by a facile silver-catalyzed chemical etching process. The solar cell incorporated with SiNWs arrays shows a high power conversion efficiency of 6.69% with an open circuit voltage of 558 mV and short circuit current density of 25.13 mA/cm² without using any extra antireflection layer and surface passivation technique. The high conversion efficiency of the solar cell is attributed to the low reflective index of SiNWs for the incident sunlight. Optimization of electrical contact and phosphorus diffusion process will be critical to improve the performance of SiNWs based solar cell in the future.

Keywords

diffusion; elemental semiconductors; etching; nanowires; optimisation; passivation; silicon; solar cells; Si; Si nanowires arrays; antireflection layer; electrical contact; facile fabrication; facile silver-catalyzed chemical etching; open circuit voltage; optimization; phosphorus diffusion; reflective index; short circuit current density; solar cell; surface passivation; voltage 558 mV; Chemical processes; Contacts; Etching; Fabrication; Nanowires; Passivation; Photovoltaic cells; Power conversion; Short circuit currents; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424740

Filename

5424740