DocumentCode
1662963
Title
Milliwatt-level power generated in the sub-terahertz range by photomixing in a metal-metal resonant cavity GaAs photoconductor
Author
Peytavit, E. ; Lepilliet, S. ; Hindle, F. ; Coinon, C. ; Akalin, T. ; Ducournau, G. ; Mouret, G. ; Lampin, J.-F.
Author_Institution
IEMN, Univ. de Lille, Villeneuve d´´Ascq, France
fYear
2012
Firstpage
1
Lastpage
2
Abstract
It is shown from on-wafer measurement that a continuous wave output power of 0.35 mW at 305 GHz can be generated by photomixing in a metal-metal Fabry-Pérot GaAs photoconductor.
Keywords
III-V semiconductors; gallium arsenide; microwave photonics; photoconducting materials; photodetectors; GaAs; continuous wave output power; frequency 305 GHz; metal-metal resonant cavity Fabry-Perot photoconductor; milliwatt-level power generation; on-wafer measurement; photomixing; power 0.35 mW; subterahertz range; Cavity resonators; Electrodes; Gallium arsenide; Photoconducting materials; Power amplifiers; Power generation; Semiconductor optical amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326001
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