Design and characterization of a wideband p-HEMT low noise amplifier

Author

Kumar, A. ; Pathak, N.P.

Author_Institution

Dept. of Electron. & Commun. Eng., Indian Inst. of Technol. Roorkee, Roorkee, India

fYear

2014

fDate

24-27 Sept. 2014

Firstpage

785

Lastpage

788

Abstract

This paper reports a pseudomorphic high electron mobility transistor (HEMT) wide band low noise amplifier (LNA) for WLAN, vehicle communication systems and point to point communication applications. The LNA had been designed by using a single ATF36163 transistor. A wide band bias network has been designed and verified over the desired frequency range. The fabricated prototype of the proposed LNA has a gain of 2.5 dB with a noise figure (NF) of 1.3 dB over the frequency range of 5-6 GHz. The designed amplifier has bandwidth of 1 GHz over the frequency range from 5-6 GHz.

Keywords

high electron mobility transistors; low noise amplifiers; microwave amplifiers; wideband amplifiers; ATF36163 transistor; WLAN; bandwidth 1 GHz; frequency 5 GHz to 6 GHz; gain 2.5 dB; point to point communication application; pseudomorphic high electron mobility transistor LNA; vehicle communication system; wideband bias network; wideband p-HEMT low noise amplifier; wireless local area network; Gain; Impedance; Noise figure; Stability analysis; Transistors; Wideband; Wireless LAN; bias network; gain; matching; noise figure; p-HEMT; wide band;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Computing, Communications and Informatics (ICACCI, 2014 International Conference on

Conference_Location

New Delhi

Print_ISBN

978-1-4799-3078-4

Type

conf

DOI

10.1109/ICACCI.2014.6968527

Filename

6968527