Title :
The influence of model parameters on accurate IMD simulations in HBTs
Author :
Wong, P. ; Pejcinovic, B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Portland State Univ., OR, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
Nominal transistor model parameters are often insufficiently precise to accurately predict intermodulation distortion (IMD) behavior in individual heterojunction bipolar transistors (HBTs). A procedure for optimizing the model parameters to achieve a more accurate simulation of IMD performance is presented. Measured IMD data for silicon-germanium HBTs of differing emitter sizes are compared to IMD simulations to illustrate the optimization process
Keywords :
Ge-Si alloys; UHF bipolar transistors; heterojunction bipolar transistors; intermodulation distortion; semiconductor device models; semiconductor materials; HBTs; IMD simulations; SiGe; emitter sizes; heterojunction bipolar transistors; intermodulation distortion behavior; optimization process; transistor model parameters; Analytical models; Computational modeling; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Intermodulation distortion; Predictive models; Radio frequency; Radiofrequency amplifiers; Silicon germanium;
Conference_Titel :
Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on
Print_ISBN :
0-7803-7057-0
DOI :
10.1109/ICECS.2001.957759
