A small sized lateral trench electrode IGBT having improved latch-up and breakdown characteristics for power IC system

Author

Kang, Ey Goo ; Moon, Seung Hyun ; Sung, Man Young

Author_Institution

Dept. of Electr. Eng., Korea Univ., Seoul, South Korea

Volume

1

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

385

Abstract

A new small sized lateral trench electrode insulated gate bipolar transistor (LTEIGBT) was proposed to improve characteristics of the conventional lateral IGBT (LIGBT) and lateral trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130 V. Conventional LIGBT and LTIGBT of the same size were 60 V and 100 V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred late

Keywords

current density; insulated gate bipolar transistors; isolation technology; power integrated circuits; semiconductor device breakdown; 100 V; 130 V; 60 V; LTEIGBT; breakdown characteristics; current densities; electric field; forward blocking voltage; latch-up characteristics; lateral trench electrode IGBT; power IC system; punch-through breakdown; trench-type electrode; Anodes; Cathodes; Current density; Electric breakdown; Electrodes; Insulated gate bipolar transistors; Medical simulation; Numerical simulation; Power integrated circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on

Print_ISBN

0-7803-7057-0

Type

conf

DOI

10.1109/ICECS.2001.957760

Filename

957760