Title :
Hydrogen dependent surface morphology study of plasma deposited SiNx:H films for two Gas Systems SiH4/NH3 and SiH4/N2
Author :
Chopra, Siddheshwar ; Gupta, R.P. ; Banerjee, Souri
Abstract :
Plasma enhanced chemical vapor deposition was used to deposit hydrogenated silicon nitride (SiNx:H) thin films using two gas mixtures: SiH4/NH3 AND SiH4/N2. NH3 and N2 gas flowrates were the only deposition parameters varied. Surface morphology of all the samples was observed with the help of atomic force microscopy (AFM). Fourier transform infrared spectroscopy (FTIR) was utilized to examine the chemical bonding and determine the total bonded hydrogen (TBH) content of the films. Ammonia deposited films were found smoother than the nitrogen deposited films. Surface roughness in both kinds of films was found to be directly proportional to the hydrogen content (TBH). Also X-ray diffraction employed has shown the presence of few silicon nitride grains ((200), (400) and (221)) in all the samples.
Keywords :
Fourier transform spectra; X-ray diffraction; ammonia; atomic force microscopy; gas mixtures; hydrogen; hydrogen bonds; hydrogenation; infrared spectra; nitrogen; plasma CVD coatings; silicon compounds; surface morphology; surface roughness; AFM; FTIR; Fourier transform infrared spectroscopy; SiH4-N2; SiH4-NH3; SiNx:H; X-ray diffraction; ammonia deposited films; atomic force microscopy; chemical bonding; gas flowrates; gas mixtures; gas systems; hydrogen content; hydrogenated silicon nitride; plasma deposited films; plasma enhanced chemical vapor deposition; silicon nitride grains; surface morphology; surface roughness; total bonded hydrogen; Atomic force microscopy; Atomic layer deposition; Bonding; Chemical vapor deposition; Hydrogen; Plasma chemistry; Semiconductor thin films; Silicon compounds; Sputtering; Surface morphology;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424759
