Subband structure and effective mass of strained SiGe (110) inversion layer for PMOSFET

Subband structure and effective mass of strained SiGe (110) inversion layer in PMOSFET are studied theoretically in this study. The strain conditions considered include the intrinsic stress resulting from growing the various composition of SiGe alloy layers on the (110) Si substrate. The quantum confinement effect resulting from the surface induced electric field in the interface is incorporated in the k.p calculation. The change of constant energy surface due to strain effects are calculated for subband structure. The density of states effective mass, m_C, the conductivity mass, m_¿, and the quantization effective mass(m_z) of the channel in the [110] direction of strained SiGe (110) inversion layer for PMOS under substrate strain and various surface induced electric field strengths are all investigated.