• DocumentCode
    1663447
  • Title

    The model of nano-scale copper particles removal from silicon surface in high pressure CO2+H2O and CO2+H2O+IPA cleaning solutions

  • Author

    Tan, Xin ; Chai, Jiajue ; Zhang, Xiaogang ; Chen, Jiawei

  • Author_Institution
    Dept. of Chem., Renmin Univ. of China, Beijing, China
  • fYear
    2010
  • Firstpage
    592
  • Lastpage
    593
  • Abstract
    This study focuses on the description of static forces in a system with a fluid phase entrapped between nano-scale particles and a surface. Equilibrium separation distance (EDS) and net adhesion force (NAF) of a particle adhering on substrate can be used as the guideline for evaluating extend of the particle cleaning. Calculations demonstrate that pressure can significantly alter the static force balance of an adhered particle on substrate, i.e., increasing the pressure of the cleaning system decreases the NAF between spherical copper particle and silicon surface entrapped with medium. The value of NAF decreases and that of ESD increases with increased pressure as the submersion height of a particle is given. The NAF (or ESD) of a particle on substrate turns to small (or large) as IPA is added into CO2-H2O system, suggesting that adding IPA in CO2-H2O system has the potential to facilitate particle disengagement from surface. For particles with different dimension under high pressure, the NAF is nearly same as the submersion height is given, and the ESD increases with increased particle radius, which means that the particle with larger dimension can be removed more easily.
  • Keywords
    adhesion; carbon compounds; copper; elemental semiconductors; nanoparticles; phase separation; silicon; surface cleaning; water; CO2-H2O; Cu; Si; cleaning solutions; equilibrium separation distance; fluid phase; nanoscale copper particles; net adhesion force; particle disengagement; particle radius; silicon surface; silicon surface entrapment; static forces; Adhesives; Bridges; Cleaning; Copper; Electrostatic discharge; Guidelines; Microscopy; Pressure effects; Silicon; Solvents;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424770
  • Filename
    5424770