Title :
A novel Preisach operator for modeling of hysteresis in VO2 microbolometer
Author :
de Almeida, L.A.L. ; Deep, G.S. ; Lima, A.M.N.
Author_Institution :
Dept. de Engenharia Eletrica, Univ. Fed. da Paraiba, Campina Grande, Brazil
fDate :
6/24/1905 12:00:00 AM
Abstract :
Modelling of vanadium dioxide (VO2) thin film microbolometer, based on the classical Preisach model, presents some discrepancies between simulation and experimentally obtained hysteresis data. This is due to the asymmetric feature of the resistance-temperature dependence in VO2 films. To reduce these discrepancies, especially for temperatures below 35C, we propose in this paper a novel operator for the classical Preisach model. This new operator accounts for reversible and irreversible components, similar to the behavior of a VO2 microcrystal. The model´s parameters are obtained from experimentally measured characteristics, which are compared with simulated data from the model.
Keywords :
bolometers; electrical resistivity; hysteresis; infrared detectors; mathematical operators; metal-insulator transition; semiconductor thin films; vanadium compounds; Preisach operator; VO2; asymmetric feature; classical Preisach model; effective medium approximation; film resistivity; hysteresis modelling; hysteretic metal-insulator transition; infrared imaging; irreversible components; model simulations; relay operator; resistance-temperature dependence; reversible components; thin film microbolometer; Bolometers; Conductivity; Electronic mail; Infrared imaging; Magnetic hysteresis; Semiconductivity; Semiconductor diodes; Semiconductor films; Semiconductor thin films; Temperature;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2002. IMTC/2002. Proceedings of the 19th IEEE
Print_ISBN :
0-7803-7218-2
DOI :
10.1109/IMTC.2002.1006854