DocumentCode :
1663738
Title :
Study of junctionless pseudo tri-gate vertical MOSFETs for RF/analog applications
Author :
Chang, Yu-Che ; Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Chen, Cheng-Hsin ; Lu, Kuan-Yu ; Tai, Chih-Hsuan ; Fan, Yi-Hsuan
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear :
2010
Firstpage :
93
Lastpage :
95
Abstract :
In this study, junctionless technology employed for fabricating pseudo tri-gate vertical (PTGV) MOSFETs is proposed and the RF/analog performance is also investigated and demonstrated. According to simulation results, the excellent performances such as high transconductance (gm), high cut-off frequency (fτ), and high transconductance generation factor (gm/Id) arc achieved. The numerical results also provide a prediction of an 8nm gate length PTGV and JPTGV for RF applications.
Keywords :
CMOS analogue integrated circuits; MOSFET; JPTGV MOSFET; RF-analog application; cut-off frequency; junctionless pseudo tri-gate vertical MOSFET; size 8 nm; transconductance generation factor; Logic gates; Radio frequency; Substrates; RF/analog; junctionless; pseudo tri-gate vertical MOSFET;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Next-Generation Electronics (ISNE), 2010 International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4244-6693-1
Type :
conf
DOI :
10.1109/ISNE.2010.5669190
Filename :
5669190
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1663738
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