• DocumentCode
    1663925
  • Title

    Ion implant damage detection by surface photovoltage

  • Author

    Lowell, John ; Wenner, Valerie ; Wagner, Dennis ; Anjum, Mohammed

  • Author_Institution
    Adv. Micro Devices Inc., Austin, TX, USA
  • fYear
    1994
  • Firstpage
    316
  • Lastpage
    318
  • Abstract
    In this paper we report on the application of optical surface photovoltage (SPV) to both quantify and qualify amorphous layers and/or lattice damage due to ion implantation to CZ P-type silicon. We will show how the technique can be used for post-anneal measurement of residual damage
  • Keywords
    ion implantation; CZ P-type silicon; Si; amorphous layers; ion implantation; lattice damage; optical surface photovoltage; post-anneal measurement; residual damage; CMOS technology; Implants; Ion implantation; Lattices; Length measurement; Monitoring; Optical filters; Optical surface waves; Particle beam optics; Pollution measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference and Workshop. 1994 IEEE/SEMI
  • Conference_Location
    Cambridge, MA
  • Print_ISBN
    0-7803-2053-0
  • Type

    conf

  • DOI
    10.1109/ASMC.1994.588286
  • Filename
    588286
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1663925