Title :
199.5 K operation of THz quantum cascade lasers
Author :
Fathololoumi, S. ; Dupont, E. ; Chan, C.W.I. ; Wasilewski, Z.R. ; Laframboise, S.R. ; Ban, D. ; Matyas, A. ; Jirauschek, C. ; Hu, Q. ; Liu, H.C.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, ON, Canada
Abstract :
The density matrix based model is employed to design a THz quantum cascade laser with optimized oscillator strength and improved injection tunneling. A maximum operating temperature of 199.5 K has been recorded at 3.22 THz (1.28ħω/kB).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; oscillator strengths; quantum cascade lasers; terahertz wave devices; tunnelling; GaAs-AlGaAs; THz quantum cascade lasers; density matrix based model; frequency 3.22 THz; injection tunneling; oscillator strength; temperature 199.5 K; Gallium arsenide; Laser modes; Oscillators; Quantum cascade lasers; Temperature measurement; Tunneling;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
