Title :
The etching and annealing influences of front-contact ZnO:Ga on amorphous thin film silicon solar cells
Author :
Yang, Hung-Jen ; Wu, Chien-Liang ; Huang, Chian-Fu ; Chen, Chun-Heng ; Chen, Yi-Chan ; Lee, Wen-Cheng
Author_Institution :
Adv. Silicon Solar Cell Div. Thin -Film Solar cell Dept., Green Energy & Environ. Res. Labs., Hsinchu, Taiwan
Abstract :
For achieving higher performance of amorphous silicon thin film solar cell, the front-contact ZnO:Al is needed to be concerned. In this paper, we focus on how the front contact ZnO:Al influences the a-Si:H thin film solar cell. In order to understand the relationship between the front-contact ZnO:Al and device, we establish a model to simulate how the feature size of the textured ZnO:Al influence the haze and short-circuit current. Moreover we introduce the anneal effect on a-Si:H thin film solar cell.
Keywords :
aluminium compounds; amorphous semiconductors; annealing; elemental semiconductors; etching; semiconductor thin films; short-circuit currents; solar cells; zinc compounds; Si:H; ZnO:Al; amorphous silicon thin film; annealing; etching; front contact; short-circuit current; solar cells; Solids; ZnO:Al; a-Si:H; annealing; component; etching;
Conference_Titel :
Next-Generation Electronics (ISNE), 2010 International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4244-6693-1
DOI :
10.1109/ISNE.2010.5669201
