• DocumentCode
    1664076
  • Title

    Active feedback receiver with integrated tunable RF channel selectivity, distortion cancelling, 48dB stopband rejection and >+12dBm wideband IIP3, occupying <0.06mm2 in 65nm CMOS

  • Author

    Youssef, Shadi ; van der Zee, Ronan ; Nauta, Bram

  • Author_Institution
    Univ. of Twente, Enschede, Netherlands
  • fYear
    2012
  • Firstpage
    166
  • Lastpage
    168
  • Abstract
    The impedance transformation property of passive mixers enables integrated high-Q channel selection at RF with a programmable center frequency through a clock [1,2]. As such, this technique is suitable for addressing both linearity and flexibility requirements in wideband and cognitive radio applications. However, given the typically low resistance level at the RF side of the receiver chain, the RC product necessary for filtering results in large capacitors, and, consequently, large die area that does not scale with technology. In addition, filter rejection at the RF side is limited by the resistance of the switches of the passive mixer. Thus, large switches are typically needed for moderate rejection values (5Ω switches for 16dB rejection [2]), which translates to higher power consumption in the LO buffers. Furthermore, filtering prior to the LNA [1] or eliminating it altogether [3] improves linearity at the expense of noise and switching harmonics being injected directly at the antenna node. Conversely, an LNA first architecture offers an opposite trade-off. This work demonstrates a highly compact design of a direct-conversion receiver with an active feedback frequency translation loop to perform channel selection at the LNA output while simultaneously cancelling its distortion.
  • Keywords
    CMOS integrated circuits; distortion; mixers (circuits); passive networks; radio receivers; CMOS; LNA output; active feedback frequency translation loop; active feedback receiver; cognitive radio applications; direct-conversion receiver; distortion cancelling; filter rejection; impedance transformation property; integrated high-Q channel selection; integrated tunable RF channel selectivity; low resistance level; passive mixers; programmable center frequency; size 65 nm; stopband rejection; wideband IIP3; Gain measurement; Noise measurement; Power harmonic filters; Radio frequency; Receivers; Semiconductor device measurement; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4673-0376-7
  • Type

    conf

  • DOI
    10.1109/ISSCC.2012.6176961
  • Filename
    6176961