DocumentCode :
1664262
Title :
3D-MAPS: 3D Massively parallel processor with stacked memory
Author :
Kim, Dae Hyun ; Athikulwongse, Krit ; Healy, Michael ; Hossain, Mohammad ; Jung, Moongon ; Khorosh, Ilya ; Kumar, Gokul ; Lee, Young-Joon ; Lewis, Dean ; Lin, Tzu-Wei ; Liu, Chang ; Panth, Shreepad ; Pathak, Mohit ; Ren, Minzhen ; Shen, Guanhao ; Song, Ta
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2012
Firstpage :
188
Lastpage :
190
Abstract :
Several recent works have demonstrated the benefits of through-silicon-via (TSV) based 3D integration, but none of them involves a fully functioning multicore processor and memory stacking. 3D-MAPS (3D Massively Parallel Processor with Stacked Memory) is a two-tier 3D IC, where the logic die consists of 64 general-purpose processor cores running at 277MHz, and the memory die contains 256KB SRAM. Fabrication is done using 130nm GlobalFoundries device technology and Tezzaron TSV and bonding technology. Packaging is done by Amkor. This processor contains 33M transistors, 50K TSVs, and 50K face-to-face connections in 5x5mm2 footprint. The chip runs at 1.5V and consumes up to 4W, resulting in 16W/cm2 power density. The core architecture is developed from scratch to benefit from single-cycle access to SRAM.
Keywords :
SRAM chips; bonding processes; microprocessor chips; packaging; parallel processing; three-dimensional integrated circuits; 3D massively parallel processor; GlobalFoundries device technology; SRAM; Tezzaron TSV; bonding technology; frequency 277 MHz; memory size 256 KByte; memory stacking; multicore processor; packaging; size 130 nm; stacked memory; through-silicon-via based 3D integration; two-tier 3D IC; voltage 1.5 V; Metals; Power demand; Random access memory; Stacking; Three dimensional displays; Through-silicon vias; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4673-0376-7
Type :
conf
DOI :
10.1109/ISSCC.2012.6176969
Filename :
6176969
Link To Document :
بازگشت