Title :
A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from −55 to 125°C
Author :
Souri, Kamran ; Chae, Youngcheol ; Makinwa, Kofi
Author_Institution :
Delft Univ. of Technol., Delft, Netherlands
Abstract :
This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20× less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2nd-order ΔΣ conversion.
Keywords :
CMOS integrated circuits; calibration; radiofrequency identification; temperature sensors; RFID tags; coarse SAR conversion; energy efficiency; energy-efficient CMOS temperature sensor; improved charge-balancing scheme; temperature -15 degC; temperature -55 degC to 125 degC; temperature 15 degC; voltage-calibrated inaccuracy; zoom ADC; Calibration; Capacitors; Energy efficiency; Energy resolution; Temperature measurement; Temperature sensors;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-0376-7
DOI :
10.1109/ISSCC.2012.6176978
