Title :
Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells
Author :
Sun, Guan ; Chen, Ruolin ; Ding, Yujie J. ; Zhao, Hongping ; Liu, Guangyu ; Zhang, Jing ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; terahertz wave spectra; wide band gap semiconductors; InGaN-GaN; broadband THz pulses; multiple quantum wells; photoluminescence intensity; terahertz output power; Broadband communication; Electric fields; Gallium nitride; Laser beams; Laser excitation; Photoluminescence; Power generation;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
